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this is information on a product in full production. december 2013 docid025631 rev 1 1/13 13 STGP30H65F trench gate field-stop igbt, h series 650 v, 30 a high speed datasheet - production data figure 1. internal schematic diagram features ? high speed switching ? tight parameters distribution ? safe paralleling ? low thermal resistance ? short-circuit rated applications ? inverter ? ups ? pfc description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. this igbt series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. furthermore, a positive v ce(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. 1 2 3 to-220 tab c (2, tab) g (1) e (3) table 1. device summary order codes marking package packaging STGP30H65F gp30h65f to-220 tube www.st.com
contents STGP30H65F 2/13 docid025631 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid025631 rev 1 3/13 STGP30H65F electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 60 a i c continuous collector current at t c = 100 c 30 a i cp (1) 1. pulse width limited by maximum junction temperature. pulsed collector current 120 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 260 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case 0.58 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics STGP30H65F 4/13 docid025631 rev 1 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static symbol parameter test condition min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 650 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a 2.0 2.4 v v ge = 15 v, i c = 30 a t j = 175 c 2.4 v v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5.0 6.0 7.0 v i ces collector cut-off current (v ge = 0) v ce = 650 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic symbol parameter test condition min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 3600 - pf c oes output capacitance 130 pf c res reverse transfer capacitance 65 pf q g total gate charge v cc = 400 v, i c = 30 a, v ge = 15 v (see figure 20: gate charge test circuit ) -105-nc q ge gate-emitter charge - 30 - nc q gc gate-collector charge - 35 - nc
docid025631 rev 1 5/13 STGP30H65F electrical characteristics table 6. switching on/off (inductive load) symbol parameter test condition min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v - 50 - ns t r current rise time 15 ns (di/dt) on turn-on current slope 1600 a/ s t d(on) turn-on delay time v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v t j = 175 c - 47 - ns t r current rise time 17 ns (di/dt) on turn-on current slope 1400 a/ s t r (v off ) off voltage rise time v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v - 20 - ns t d ( off ) turn-off delay time 160 ns t f current fall time 60 ns t r (v off ) off voltage rise time v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v t j = 175 c - 22 - ns t d ( off ) turn-off delay time 146 ns t f current fall time 88 ns t sc short circuit withstand time v cc 360 v, v ge = 15 v 3 6 - s table 7. switching energy (inductive load) symbol parameter test condition min. typ. max. unit eon (1) turn-on switching losses v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v -0.35-mj e off (2) turn-off switching losses - 0.40 - mj e ts total switching losses - 0.75 - mj eon (1) turn-on switching losses v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v t j = 175 c -0.61-mj e off (2) turn-off switching losses - 0.84 - mj e ts total switching losses - 1.45 - mj 1. energy losses include reverse recovery of the external diode. the diode is the same of the co-packed stgp30h60df. 2. turn-off losses include also the tail of the collector current.
electrical characteristics STGP30H65F 6/13 docid025631 rev 1 2.1 electrical characteristics (curves) figure 2. output characteristics (t j = 25c) figure 3. output characteristics (t j = 175c) figure 4. transfer characteristics figure 5. normalized v ge(th) vs. junction temperature figure 6. power dissipation vs. case temperature figure 7. collector current vs. frequency i c 60 40 20 0 0 2 v ce (v) 4 (a) 1 3 80 100 11v 9v 13v v ge =15v am17360v1 i c 60 40 20 0 0 2 v ce (v) 4 (a) 1 3 80 100 11v 9v 13v v ge =15v 7v am17361v1 i c 60 40 20 0 7 9 v ge (v) 11 (a) 8 10 80 100 t j =-40c t j =25c t j =175c v ce =5v am17362v1 v ge(th) 0.9 0.8 0.7 0.6 -50 0 t j (c) 100 norm 50 1.0 150 am17369v1 p tot 120 80 40 0 0 50 t case (c) 100 (w) 25 75 160 200 125 150 240 am17364v1 i c 30 20 1 f(khz) (a) 10 40 50 60 rectangular current shape, (duty cycle=0.5, vcc= 400v rg=10ohm,vge=0/15v , tj=175 c) tc=80c tc=100c am17380v1
docid025631 rev 1 7/13 STGP30H65F electrical characteristics figure 8. v ce(sat) vs. junction temperature figure 9. v ce(sat) vs. collector current figure 10. forward bias safe operating area figure 11. thermal impedance figure 12. gate charge vs. gate-emitter voltage figure 13. capacitance variations vs. v ce v ce(sat) 1.8 1.6 1.4 1.2 -50 0 t j (c) 100 (v) 50 2.0 2.2 150 2.4 2.6 2.8 3.0 i c =15a i c =30a i c =60a am17366v1 v ge =15v v ce(sat) 1.8 1.6 1.4 1.2 10 20 i c (a) 40 (v) 30 2.0 2.2 50 2.4 2.6 2.8 3.0 t j =-40c v ge =15v t j =25c t j =175c 3.2 1. am17367v1 i c 100 10 1 1 100 v ce (v) 10 (a) (single pulse t c =25c, t j <175c, v ge =15v) 1s 100s 1ms vce(sat) limit am17370v1 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0 0.01 0.02 0.05 0.1 0.2 0.5 zth=k rthj-c =tp/ t tp t zthto2t_b v ge 8 6 4 2 0 q g (nc) 100 (v) 50 10 v cc = 400v, i c =30a 12 14 16 0 am17372v1 c 1000 100 0.1 v ce (v) 10 (pf) 1 10 cies coes cres am17373v1
electrical characteristics STGP30H65F 8/13 docid025631 rev 1 figure 14. collector current vs. case temperature figure 15. switching losses vs. gate resistance figure 16. switching losses vs. collector current figure 17. switching losses vs temperature figure 18. short circuit time and current vs. v ge i c 30 20 0 0 50 t case (c) 100 (a) 25 75 40 50 v ge >15v t j <175c 125 150 60 10 am17363v1 e 1000 750 500 0 r g ( ) 20 (j) 10 v cc = 400v, v ge =15v 250 eon eoff 40 30 i c = 30a, t j =175c 1250 1500 am17374v1 e 1200 800 400 15 i c (a) 35 (j) 25 v cc = 400v, v ge =15v 0 eon eoff 55 45 r g = 10 , t j =175c 1600 2000 am17375v1 e 600 500 400 25 t j (c) 75 (j) 50 v cc = 400v, v ge =15v 300 eon eoff 125 100 r g = 10 , i c =30a 700 800 150 am17376v1 tsc 15 10 5 8 v ge (v) 12 (s) 10 v cc = 360v, r g = 10 0 t sc i sc 14 20 i sc (a) 150 100 50 0 200 300 250 350 400 450 am17377v1
docid025631 rev 1 9/13 STGP30H65F test circuits 3 test circuits figure 19. test circuit for inductive load switching figure 20. gate charge test circuit figure 21. switching waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10%
package mechanical data STGP30H65F 10/13 docid025631 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 22. to-220 type a drawing 0015988_typea_rev_s
docid025631 rev 1 11/13 STGP30H65F package mechanical data table 8. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
revision history STGP30H65F 12/13 docid025631 rev 1 5 revision history table 9. document revision history date revision changes 16-dec-2013 1 initial release.
docid025631 rev 1 13/13 STGP30H65F please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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